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On the mechanisms of hydrogen implantation induced silicon surface layer cleavage
Item type:
Thesis
,
Open Access
On the mechanisms of hydrogen implantation induced silicon surface layer cleavage
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Files
dth.pdf
(5.29 MB)
Date
2003-08-06
Authors
Höchbauer, Tobias
Publisher
Philipps-Universität Marburg
DOI
https://doi.org/10.17192/z2002.0403
Supervisors
Review
Metadata
Dates
Created
:
2001
Issued
:
2003-08-06
Updated
:
2011-08-10
DOI
https://doi.org/10.17192/z2002.0403
Faculty
Fachbereich Chemie
Publisher
Philipps-Universität Marburg
Language
eng
Data types
DoctoralThesis
Keywords
Silicon surface layer cleavage
DDC-Numbers
540
License
https://rightsstatements.org/vocab/InC-NC/1.0/
URI
https://open.uni-marburg.de/handle/10.17192/z2002.0403
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Citation
BibTex
Höchbauer, Tobias:
On the mechanisms of hydrogen implantation induced silicon surface layer cleavage
. : Philipps-Universität Marburg 2003-08-06. DOI: https://doi.org/10.17192/z2002.0403.
License
This item has been published with the following license:
In Copyright
