Photolumineszenzspektroskopie der Ladungstransferexzitonen zur Analyse der Grenzflächenqualität von Typ II Heterostrukturen
Loading...
Files
Date
2025-10-21
Authors
Publisher
Philipps-Universität Marburg
item.page.supervisor-of-thesis
Abstract
This study investigated the extent to which the interface morphology influences the recombination properties of the type II material system (Ga,In)As/GaAs/Ga(As,Sb) and which growth parameters can contribute to optimisation. In addition, the approach was investigated as to whether the radiative recombination of spatially separated charge carriers through an interface is suitable for non-destructive analysis of the interface quality. For this purpose, two different sample sets were produced, in which the growth parameters were varied. To do this, growth in the active zone was interrupted for 10 s to 120 s and the material composition was changed in the reactor during this time in order to specifically manipulate the interface morphology. In the literature, growth interruptions are a common method for improving the roughness of surfaces and the order of already grown layers. In order to be able to treat both the interfaces of (Ga,In)As and Ga(As,Sb) with growth interruptions (GI), the sequence of growth of the different materials was also changed. This made it possible to investigate both the (Ga,In)As/GaAs interface and the Ga(As,Sb)/GaAs interface. Structural investigations of the layer surfaces showed that different growth interruption conditions must apply to each material in order to have a positive effect on the interface. In conclusion, it was confirmed that the interface morphology has an influence on the static and dynamic optical properties of a type II material system. Optimal growth parameters can be determined that lead to an optimisation of radiative recombination. Furthermore, it was shown how sensitive Type II systems are to excitation power and the associated band bending effects. It was confirmed that Type II charge transfer excitons offer a promising approach to inner interfaces and their morphology.
Review
Metadata
Contributors
Supervisor:
Dates
Created: 2025Issued: 2025-10-21Updated: 2025-10-21
Faculty
Fachbereich Physik
Language
ger
Data types
DoctoralThesis
Keywords
charge transferheterostructuresinterfaces
DFG-subjects
TransferexzitonenGaAsSbGaInAsselektives ÄtzenHerterostrukturenGrenzflächenSpektroskopieTyp II
DDC-Numbers
530
show more
Rost, Luise (0000-0002-5188): Photolumineszenzspektroskopie der Ladungstransferexzitonen zur Analyse der Grenzflächenqualität von Typ II Heterostrukturen. : Philipps-Universität Marburg 2025-10-21. DOI: https://doi.org/10.17192/z2025.0529.