Item type:Thesis, Open Access

Linear and Nonlinear Optical Properties of Germanium and Dilute Nitride Containing Semiconductors

Thumbnail Image

Files

dps.pdf (10.89 MB)

Date

2016-06-08

relationships.isAuthorOf

Publisher

Philipps-Universität Marburg
DOI

item.page.supervisor-of-thesis

Abstract

The description of the interaction between light and matter is the basis of our understanding of the electro-optical properties of semiconductors. It is of special importance for semiconductor laser systems. The gain medium of these systems is described with the help of a microscopic many-body theory. In this work, such a theory is applied to calculate the photoluminescence of dilute nitride containing semiconductors. Theory-experiment comparisons enable the determination of formerly controversially discussed system parameters of this material class, which represents a promising candidate for more efficient lasers. It is shown that the discontinuity of a GaAs/Ga(NAs) interface is type I. Similarly, a microscopic theory can be applied to calculate the absorption of semiconductors. In this work, the coherent absorption of pump-probe experiments in Ge and (GaIn)As quantum wells is modeled. The experimental findings are reproduced if different dephasing mechanisms are assumed for the samples; a consequence of the different nature of the band gap (direct or indirect). Additionally, the terahertz absorption for indirect semiconductors is modeled. For this purpose, the microscopic many-body theory is extended to include systems with mass anisotropy. On the example of Ge and Si, it is shown that as a result of the mass anisotropy, two distinct resonances appear in the terahertz absorption spectrum.

Review

Metadata

Contributors
Supervisor:
Dates
Created: 2016Issued: 2016-06-08
DOI
https://doi.org/10.17192/z2016.0213
Faculty
Fachbereich Physik
Publisher
Philipps-Universität Marburg
Language
eng
Data types
DoctoralThesis
Keywords
terahertz spectroscopyoptical propertiestheoretical physicssemiconductorTherahertz Spektroskopieexciton
DFG-subjects
HalbleiterPhotolumineszenzVielteilchentheorieOptische EigenschaftNiederdimensionaler HalbleiterPhysikTheoretische PhysikExziton
DDC-Numbers
530
License
https://rightsstatements.org/vocab/InC-NC/1.0/
URI
https://open.uni-marburg.de/handle/10.17192/z2016.0213
show more
Springer, Phillip: Linear and Nonlinear Optical Properties of Germanium and Dilute Nitride Containing Semiconductors. : Philipps-Universität Marburg 2016-06-08. DOI: https://doi.org/10.17192/z2016.0213.

License

item.page.license.under-copyright
This item has been published with the following license: In Copyright