A central challenge in the aspiration towards a microscopic understanding of the optoelectronic properties of semiconductors can be found in the analysis of the Coulomb-interaction correlated many-body system of the charge carriers in the material.
This many-body system is characterized by manifold effects resulting from the Coulomb interaction.
In excitonic systems, the Coulomb interaction enables - in particular in the form of an interplay with terahertz excitations - remarkable transition mechanisms.
Generally, the hierarchy problem of the coupled many-body dynamics is in practice only feasible by truncating it on a suitable level of approximation.
Therefore, an effective treatment of Coulomb-scattering effects in the many-body theory of optically excited semiconductors is necessary to model and explain the related effects appearing
in the spectroscopy of those material systems with sufficient accuracy but adequate numerical effort and efficiency.
many-body theoryExcitons and related phenomenaCoulomb scatteringQuantum wellsexcitonIII-V semiconductorsterahertzlight-matter interactiondiffusives Streumodell
Breddermann, Benjamin (1053951353): Effektive Behandlung der Coulomb-Streueffekte in der Vielteilchentheorie optisch angeregter Halbleiter. : Philipps-Universität Marburg 2014-07-23. DOI: https://doi.org/10.17192/z2014.0362.
License
This item has been published with the following license: In Copyright
