Item type:Thesis, Open Access

Über den Einfluss von isoelektronischen Störstellen auf Bandbiegung und Unordnung in Verbindungshalbleitern

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Date

2012-05-18

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Philipps-Universität Marburg
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Abstract

Isolectronic impurities and their impact on the properties of compound semiconductors is discussed in two systems: Nitrogen in Ga(As,P) quantum wells on the one hand and Sulfur and Selenium in bulk ZnTe. The properties are reduced to two experimentally observable aspects: Band Bowing, i.e. the non-linearity of the band gap of the compound semiconductor and disorder, i.e. in particular the formation of a strongly localized density of states beneath the fundamental band gap. Apart of the pure experimental studies an insight into the theoretical model of disorder-induced temperature dependent luminescence properties of the compound semiconductors by means of Monte Carlo Simulations is given.

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Dates
Created: 2011Issued: 2012-05-18Updated: 2012-12-04
DOI
https://doi.org/10.17192/z2012.0126
Faculty
Fachbereich Physik
Publisher
Philipps-Universität Marburg
Language
ger
Data types
DoctoralThesis
Keywords
BandbiegungImpurity stateIsoelectronic impurityAcceptorBand gapImpurity distributionSemiconductor physicsDonor
DFG-subjects
Donator Isoelektronische StörstelleStörstellenverteilungStörstellenniveauAkzeptor Halbleiterphysik
DDC-Numbers
530
License
https://rightsstatements.org/vocab/InC-NC/1.0/
URI
https://open.uni-marburg.de/handle/10.17192/z2012.0126
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Karcher, Christian (113480156): Über den Einfluss von isoelektronischen Störstellen auf Bandbiegung und Unordnung in Verbindungshalbleitern. : Philipps-Universität Marburg 2012-05-18. DOI: https://doi.org/10.17192/z2012.0126.

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