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Philipps-Universität Marburg
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Abstract
The equations of motion necessary for the computation of luminescence spectra in realistic semiconductor heterostructures are presented. The combination of these multiband semiconductor luminescence equations on the level of two-particle correlations and scattering terms in 2nd Born-Markov approximation with a k.p-bandstructure calculation allows the quantitative modeling of luminescence spectra. This is demonstrated in theory-to-experiment comparisons. It is also shown why simple rate equations for the luminescence fail at high excitation intensity.
Combining bandstructure calculation, semiconductor luminescence equations, and semiconductor Bloch equations it becomes possible to compute a variety of optical properties of semiconductors consistently and quantitatively. This is utilized to compute the appropriate gain spectra from measured luminescence spectra. It is further used to study the expected lasing properties and the carrier loss mechanisms of GaInNAs/GaAs structures in the technologically interesting wavelength range of 1550nm. Finally, the optical properties of a type I to type II transition in the band gap alignment in heterostructures are investigated. In doing so, photomodulated reflectance spectra are computed and analyzed with the help of microscopic theory for the first time.
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Dates
Created: 2005Issued: 2006-05-03Updated: 2011-08-10
Faculty
Fachbereich Physik
Publisher
Philipps-Universität Marburg
Language
eng
Data types
DoctoralThesis
Keywords
Theory, models, and numerical simulationQuantum wellsPhotomodulierte ReflexionSemiconductor laserLuminescenceOptical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients,Optische EigenschaftenTheoretical modelingHeterostructureEfficiency, stability, gain, and other operational parametersPhotoreflectanceSemiconductor physicsTheoretische ModellierungOptical gainIII-V semiconductors
DFG-subjects
LumineszenzHalbleiterphysikOptischer GewinnHalbleiterlaserDrei-Fünf-HalbleiterModulationsspektroskopieHeterostruktur
DDC-Numbers
530
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Schlichenmaier, Christoph: Modeling of Optical Properties of Semiconductor Heterostructures. : Philipps-Universität Marburg 2006-05-03. DOI: https://doi.org/10.17192/z2006.0294.
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This item has been published with the following license: In Copyright