Interface-Specific Excitation of Coherent Phonons at the Buried GaP/Si(001) Heterointerface

Ultrafast charge-carrier and phonon dynamics at the buried heterointerface of GaP/Si(001) are investigated by means of two-color pump-probe reflectivity measurements. The carrier-induced reflectivity signal exhibits a resonant enhancement at a pump-photon energy of 1.4 eV, which is assigned to an optical transition at the interface. In addition, the transient reflectivity is modulated by a coherent oscillation at 2 THz, whose amplitude also becomes maximum at 1.4 eV. The observed resonant behavior of the oscillation, in combination with the characteristic wavelength-dependencies of its frequency and its initial phase, strongly indicates that the 2-THz mode is a difference-combination mode between a GaP-like and a Si-like phonon at the heterointerface and that the corresponding second-order Raman scattering process can be enhanced by a double resonance involving the interfacial electronic states.

Metadata

Relations

Is version of: https://doi.org/10.1002/admi.202400573

DOI

https://doi.org/10.17192/openumr/783

Publisher

Wiley

Language

en

Data types

JournalArticle

Keywords

Ultrafast charge-carrierphonon dynamicsGaP/Si(001)

Funding

Funding Organisations:

Philipps-Universität Marburg

Project Information:Gefördert durch den Open-Access-Publikationsfonds der UB Marburg.

License

Attribution 4.0 International

URI

https://open.uni-marburg.de/handle/openumr/10676

Mette, Gerson; Ishioka, Kunie; Youngkin, Steven; Stolz, Wolfgang; Volz, Kerstin; Höfer, Ulrich: Interface-Specific Excitation of Coherent Phonons at the Buried GaP/Si(001) Heterointerface. In: Advanced Materials Interfaces, 2025, 12, 2400573, Jg. (), S. 2400573-2400573. DOI: https://doi.org/10.17192/openumr/783.